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UF3C065080K3S

UF3C065080K3S
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UF3C065080K3S
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 650V/80mOhm SiC FAST CASCODE G3 REDUCED Rth
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
14 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
6 V

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everything as it is written in the description of the same deductible prodovtsu deserved
Quick delivery. Secure packing. Excellent product. Thank you
Quickly came to CET, all in one package. Look at the rules
Hello! Order received, very happy. Thank you very much!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
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