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UF3C065080T3S

UF3C065080T3S
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UF3C065080T3S
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 650V/80mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
59 ns
Typical Turn-On Delay Time
18 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

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Najnovije recenzije

Napišite vlastiti odgovor
Quickly came to CET, all in one package. Look at the rules
Everything is excellent! recommend this seller!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Works. Recommend
Više

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