Broj dijela UF3C065080K4S Kategorije MOSFET RoHS list UF3C065080K4S Opis MOSFET 650V 80mOhm SiC Cascode Fast
Kategorije MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Id - Continuous Drain Current 31 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 190 W Product Type MOSFET Qg - Gate Charge 51 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 100 MOhms Rise Time 20 ns Series UF3C Technology SiC Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 37 ns Typical Turn-On Delay Time 21 ns Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 25 V Vgs th - Gate-Source Threshold Voltage 4 V