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UF3C120150K4S

UF3C120150K4S
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UF3C120150K4S
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 1200V 150mOhm SiC FAST CASCODE G3
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Id - Continuous Drain Current
18.4 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
166.7 W
Product Type
MOSFET
Qg - Gate Charge
25.7 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
330 mOhms
Rise Time
8 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
21 ns
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

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Najnovije recenzije

Napišite vlastiti odgovor
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Yes, they are all here. :)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Više

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