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IGB15N65S5ATMA1

IGB15N65S5ATMA1
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Tehnički podaci

Kategorije
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
35 A
Continuous Collector Current Ic Max
35 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
105 W
Product Type
IGBT Transistors
Technology
SI

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Najnovije recenzije

Napišite vlastiti odgovor
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
Više

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IGB15N65S5ATMA1 Vijesti

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Povezane ključne riječi za IGB1

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