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Kategorije
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
2.18 mm
Id - Continuous Drain Current
2 A
Length
5.08 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
5 W
Package / Case
SO-8
Pd - Power Dissipation
30 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 5 V
Width
4.06 mm

Najnovije recenzije

everything as it is written in the description of the same deductible prodovtsu deserved

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Parcel received shook cool all 10 pieces is not checked check unsubscribe

Still not tasted, looks good. Fast Shipping, very good Price. Like again

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