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Kategorije
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
2.18 mm
Id - Continuous Drain Current
3 A
Length
5.08 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
7.5 W
Package / Case
SO-8
Pd - Power Dissipation
35 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
4.06 mm

Najnovije recenzije

Teşekkürler

fast delivery, item as described, thanks!!

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Works. Find the price of this product is very good

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