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- IGP40N65H5
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- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGP40N65H5
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Tehnički podaci
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.95 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 250 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
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Najnovije recenzije
Hello! Order received, very happy. Thank you very much!
Flavia
Thank You all fine, packed very well
Ulrich Bundke
fast delivery
Mike Ibarra
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Bas van den Boogaard
Možda ti se također svidi
Osobe koje gledaju IGP40N65H5 zatim je kupio
IGP40N65H5 Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za IGP4
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- IGP40N65H5 Vruće ponude
- IGP40N65H5 Cijena prijeloma
- IGP40N65H5 Tehnički podaci
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