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IGP40N65H5XKSA1
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Tehnički podaci
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 250 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
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Najnovije recenzije
Thanks for your feedback!
Emanuela Fe
goods very well received very good quality
Fabrice Cubaynes
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Takes 8 days to Japan. Good!
Alex Fragkos
it is safe and sound all, thank you seller!
Arturo Madril
Možda ti se također svidi
Osobe koje gledaju IGP40N65H5XKSA1 zatim je kupio
IGP40N65H5XKSA1 Vijesti
03/14/2023
03/13/2023
03/13/2023
Povezane ključne riječi za IGP4
- IGP40N65H5XKSA1 Integriran
- IGP40N65H5XKSA1 RoHS
- IGP40N65H5XKSA1 PDF Datasheet
- IGP40N65H5XKSA1 list
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- IGP40N65H5XKSA1 Distributer
- IGP40N65H5XKSA1 PDF
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- IGP40N65H5XKSA1 ICS
- IGP40N65H5XKSA1 Preuzmite PDF
- IGP40N65H5XKSA1 Preuzmite podatkovni list
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- IGP40N65H5XKSA1 Vruće ponude
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- IGP40N65H5XKSA1 Tehnički podaci
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