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UF3C120080K4S

UF3C120080K4S
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UF3C120080K4S
Kategorije
MOSFET
RoHS
list
Opis
MOSFET 1200V 80mOhm SiC Cascode Fast
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Tehnički podaci

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
254.2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

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Teşekkürler
Received, Fast shipping, not checked yet
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Više

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