Broj dijela 2SA2012-TD-E Kategorije Bipolar Transistors - BJT RoHS list 2SA2012-TD-E Opis Bipolar Transistors - BJT BIP PNP 5A 30V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 30 V Collector- Emitter Voltage VCEO Max - 30 V Collector-Emitter Saturation Voltage - 140 mV Configuration Single DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 560 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 350 MHz Maximum DC Collector Current - 5 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case SOT-89-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 3.5 W Product Type BJTs - Bipolar Transistors Series 2SA2012 Technology SI Transistor Polarity PNP Unit Weight