Broj dijela 2SA2007E Kategorije Bipolar Transistors - BJT RoHS list 2SA2007E Opis Bipolar Transistors - BJT Trans GP BJT PNP 60V 12A
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 100 V Collector- Emitter Voltage VCEO Max - 60 V Collector-Emitter Saturation Voltage - 0.3 V Configuration Single Continuous Collector Current - 12 A DC Collector/Base Gain hfe Min 160 DC Current Gain hFE Max 320 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-220FP-3 Packaging Bulk Pd - Power Dissipation 25 W Product Type BJTs - Bipolar Transistors Series 2SA2007 Technology SI Transistor Polarity PNP Unit Weight