Broj dijela 2SA2013-TD-E Kategorije Bipolar Transistors - BJT RoHS list 2SA2013-TD-E Opis Bipolar Transistors - BJT BIP PNP 4A 50V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 200 mV Configuration Single Continuous Collector Current - 4 A DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 560 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 360 MHz Maximum DC Collector Current - 7 A Mounting Style SMD/SMT Package / Case PCP-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.5 W Product Type BJTs - Bipolar Transistors Series 2SA2013 Technology SI Transistor Polarity PNP Unit Weight