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Kategorije
RF MOSFET Transistors
Configuration
Dual
Gain
13 dB
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
500 MHz
Output Power
25 W
Package / Case
DQ
Pd - Power Dissipation
125 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V

Najnovije recenzije

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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