Broj dijela 2SA2210-1E Kategorije Bipolar Transistors - BJT RoHS list 2SA2210-1E Opis Bipolar Transistors - BJT BIP PNP 20A 50V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 200 mV Configuration Single DC Collector/Base Gain hfe Min 150 DC Current Gain hFE Max 450 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 140 MHz Maximum DC Collector Current - 20 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Package / Case TO-220FP-3 Packaging Tube Pd - Power Dissipation 30 W Product Type BJTs - Bipolar Transistors Series 2SA2210 Technology SI Transistor Polarity PNP Unit Weight