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2SA2169-E

2SA2169-E
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 290 mV
Configuration
Single
Continuous Collector Current
- 10 A
DC Collector/Base Gain hfe Min
200
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
130 MHz
Maximum DC Collector Current
- 13 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-251-3
Packaging
Bulk
Pd - Power Dissipation
20 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2169
Technology
SI
Transistor Polarity
PNP
Unit Weight

Kategorija pordukta

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Najnovije recenzije

Napišite vlastiti odgovor
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
I received the product right, thank you very much 2018/12/03 ★★★★★
and whole all right. the features no more функционалу check.
Product Description. highly recommend.
Više

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Povezane ključne riječi za 2SA2

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