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- RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
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Tehnički podaci
- Kategorije
- RF MOSFET Transistors
- Channel Mode
- Enhancement
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 4 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 10 W
- Package / Case
- DP
- Pd - Power Dissipation
- 42 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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Najnovije recenzije
thanks for resending, this item is good !
PLEMMENOS VAGELIS
Yes, they are all here. :)
sudheer kumar sirra
The goods are OK, thank you dealers.
CHARLES SANTOS
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Looks good
Michael Beck
D2012UK Vijesti
03/14/2023
03/13/2023
03/13/2023
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