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- RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
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Tehnički podaci
- Kategorije
- RF MOSFET Transistors
- Channel Mode
- Enhancement
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 4 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 10 W
- Package / Case
- DP
- Pd - Power Dissipation
- 42 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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Najnovije recenzije
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
packed pretty good, all is ok,-seller.
Julianah Yungkim
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
D2012UK Vijesti
03/14/2023
03/13/2023
03/13/2023
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