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Tehnički podaci
- Kategorije
- RF MOSFET Transistors
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 8 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 20 W
- Package / Case
- DP
- Pd - Power Dissipation
- 8.3 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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Najnovije recenzije
fast delivery, item as described, thanks!!
Sandra Scheck
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
D2010UK Vijesti
03/14/2023
03/13/2023
03/13/2023
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