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Tehnički podaci
- Kategorije
- RF MOSFET Transistors
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 8 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 20 W
- Package / Case
- DP
- Pd - Power Dissipation
- 8.3 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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575,056 proizvodi
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20,391 proizvodi
Najnovije recenzije
Received, Fast shipping, not checked yet
Roy Boustany
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Thank You all fine, packed very well
Ulrich Bundke
D2010UK Vijesti
03/14/2023
03/13/2023
03/13/2023
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