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2SA2029T2LQ

2SA2029T2LQ
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Tehnički podaci

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 60 V
Collector- Emitter Voltage VCEO Max
- 50 V
Configuration
Single
Continuous Collector Current
- 0.15 A
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
560
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
140 MHz
Height
0.5 mm
Length
1.2 mm
Maximum DC Collector Current
0.15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
VMT-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA2029
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
0.8 mm

Kategorija pordukta

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