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Tehnički podaci
- Kategorije
- RF MOSFET Transistors
- Configuration
- Dual
- Gain
- 10 dB
- Id - Continuous Drain Current
- 6 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 30 W
- Package / Case
- DK
- Pd - Power Dissipation
- 117 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
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Najnovije recenzije
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
fast delivery
Mike Ibarra
D2016UK Vijesti
03/14/2023
03/13/2023
03/13/2023
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